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August 2024

Molecular Beam Epitaxy Cluster System Community Consultation

The EPSRC National Epitaxy Facility has been supporting world-class semiconductor
research in the UK for over 40 years. We are now seeking investment in a new state-of-the-
art Molecular Beam Epitaxy (MBE) Cluster System to continue to provide high-quality
epitaxial wafers to the community, but also to present novel growth capabilities allowing for
new research directions to develop.

The new equipment will provide advanced automation processes for high throughput
production of epitaxial wafers, enhance the environmental sustainability of the facility
through more efficient use of resources, and offer flexibility for expansion of additional
capabilities, such as dedicated growth chambers or processing tools.

We have consulted the community by sending a NEF MBE Consultation Form to our users. This will allow them to indicate their interest in the various new capabilities that the new MBE Cluster System could provide, for existing research or opportunities for novel research directions in the future. This will enable us to prioritise the investment in the equipment that’s most relevant to the UK semiconductors research landscape.

We envisage the following will enhance the existing national capabilities:

1) Two, linked, ultra-high vacuum (UHV) chambers offering advanced compound
semiconductor structures based on unique Arsenide-Phosphide-Antimonide-Bismide-
Dilute Nitride combinations.
2) Developing processes for routine in-situ plasma/hydrogen cleaning, surface
preparation, and analysis for a range of planar/patterned III-V (and other) substrates
for epitaxial regrowth.
3) Advanced in-situ characterization, for unprecedented accuracy in determining growth
rates and maintaining growth conditions for large, complex structures.
4) Integrated data management system to synchronise growth parameters and
information from in-situ characterisation, suitable for automated data analysis, real-
time growth feedback, and machine learning.
5) Connected UHV metallisation chamber with cryogenically cooled stage allowing for
metal and potentially dielectric deposition, enabling new thin-film material
combinations such as hybrid semiconductor-superconducting devices for quantum
technology applications.
6) Vacuum transfer of epitaxial material to external systems using a compatible vacuum
suitcase to allow further processing and integration with other systems in the UK.
7) Alternative sources, such as gas injectors, allowing growth using novel materials and
dopants with the opportunity of achieving higher growth rates.

The MBE consultation form deadline is today, 13th August, allowing us to make a strong application for the new MBE Cluster System to the EPSRC Strategic Infrastructure call deadline of 20th August.